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The Methodology Center
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Home arrow People arrow Liying Huang Ph.D.

Liying Huang, Ph.D.
Programmer Analyst, The Methodology Center

Address:
The Methodology Center
The Pennsylvania State University
204 E. Calder Way, Suite 400
State College, PA 16801

E-mail: This e-mail address is being protected from spambots. You need JavaScript enabled to view it
Telephone:
814-865-4323
Fax: 814-863-0000

PDF Biosketch
PDF CV

Liying Huang, Ph.D.
Education:
Ph.D., Michigan State University, 1995 (Applied Mathematics)
M.S., Michigan State University, 1992 (Statistics)
B.S., Peking University, 1989 (Mathematics and Information Science)

Current Projects and Collaborators:
I work with John Dziak and Stephanie Lanza of The Methodology Center on the development of new SAS prodecures. Now we are working on the new releases of SAS procedures (LCA, LTA) developed from Fortran codes. In addition, I am interested in building web-based application using Ruby on Rails.

Publications:
Peer-reviewed Papers

Huang, L., & Yen, D. (1997). A Gauss-Galerkin finite-difference method for singular partial differential equations in two space variables. Numerical Methods for Partial Differential Equations, 13, 331-355.


Other Publications

Kozaczek, K., Martin, R., Huang, L., Kurtz, D., & Moran, P. (2003). Room temperature electroplated Copper recrystallization: In-situ mapping on 200/300 mm patterned wafers. AIP Conference Proceedings of the International Conference on Characterization and Metrology for ULSI Technology, 683, 485-489, DOI:10.1063/1.1622515.

 

Kozaczek, K., Kurtz, D., Moran, P., Martin, R., Huang, L., & Stratilatov, A. (2003). Metrology tool for microstructure control on 300 mm wafers during damascene copper processing. AIP Conference Proceedings of the International Conference on Characterization and Metrology for ULSI Technology, 683, 490-493, DOI:10.1063/1.1622516.

 

Kozaczek, K., Moran, P., Kurtz, D., Martin, R., Huang, L., & Stratilatov, A. (2003). D080 X-ray diffraction metrology tool for microstructure control on 300mm wafers for silicon based semiconductors, Powder Diffraction, 18, 172-172.

 
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